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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage INCH Collector-emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 1500 800 7.5 10 25 6 9 UNIT V V V A A A A W ae ae Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25ae 45 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN BU2520AF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V VEBO Emitter-base breakdown voltage IB=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2 A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2 A VCE=BVCES; VBE=0 Tj=125ae VEB=7.5V; IC=0 1.1 1.0 2.0 1.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain hFE-2 DC current gain ANG CH IC=0.1A ; VCE=5V IC=6A ; VCE=5V CC Collector capacitance IN SEM E IE=0; f=1MHz;VCB=10V OND IC 5 TOR UC 7 9.5 115 pF 13 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520AF SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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